Vertical transport FETs with asymmetric channel profiles using dipole layers

ABSTRACT

Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by forming a gradient threshold voltage adjusting gate dielectric structure between the bottom drain region of the FET and the top source region of the FET. The gradient threshold voltage adjusting gate dielectric structure includes a doped interface high-k gate dielectric material that is located in proximity to the bottom drain region and a non-doped high-k dielectric material that is located in proximity to the top source region. The non-doped high-k dielectric material has a higher threshold voltage than the doped interface high-k gate dielectric.

BACKGROUND

The present application relates to a semiconductor structure and amethod of forming the same. More particularly, the present applicationrelates to a semiconductor structure including at least one verticaltransport field effect transistor (FET) having a gradient thresholdvoltage, and a method of forming such a structure.

Conventional vertical transistors are devices where the source-draincurrent flows in a direction normal to the substrate surface. In suchdevices, a vertical semiconductor fin (or pillar) defines the channelwith the source and drain located at opposing ends of the semiconductorfin. Vertical transistors are an attractive option for technologyscaling for 5 nm and beyond.

The lateral asymmetric channel (LAC) doping profile approach providesone of the most effective ways to improve the electrical characteristicsof transistor devices. For LAC devices, the doping concentration of thesource side is higher than that of the drain side in the channel. Thechannel potential transition at the source side channel region is muchstepper than that of the other channel regions, while the device isoperating due to non-uniform channel doping. Such a steep potentialdistribution near the source side enhances the lateral channel electricfield and this increases the carrier mobility. This approach, however,suffers from channel dopant diffusion and dopant variation. Also, it isdifficult to design short channel devices using the LAC approach. Thereis thus a need for providing a vertical transport field effecttransistor (FET) having improved electrical characteristics and deviceperformance.

SUMMARY

Vertical transport field effect transistors (FETs) having improveddevice performance are provided. Notably, vertical transport FETs havinga gradient threshold voltage are provided. The gradient thresholdvoltage is provided by forming a gradient threshold voltage adjustinggate dielectric structure between the bottom drain region of the FET andthe top source region of the FET. In the present application, thegradient threshold voltage adjusting gate dielectric structure includesa doped interface high-k gate dielectric material that is located inproximity to the bottom drain region and a non-doped high-k dielectricmaterial that is located in proximity to the top source region. Thenon-doped high-k dielectric material has a higher threshold voltage thanthe doped interface high-k gate dielectric material.

One aspect of the present application relates to a semiconductorstructure. In one embodiment, the semiconductor structure includes atleast one semiconductor fin present in a device region and extendingupwards from a semiconductor substrate, wherein an interfacialdielectric material is located on a sidewall surface of a middle portionof the at least one semiconductor fin. A bottom drain region is locatedabove the semiconductor substrate and contacting a sidewall surface of abottom portion of the at least one semiconductor fin. A gradientthreshold voltage adjusting gate dielectric structure is located abovethe bottom drain region and contacting the interfacial dielectricmaterial, wherein the gradient threshold voltage adjusting gatedielectric structure comprises a doped interface high-k gate dielectricmaterial and a non-doped high-k dielectric material. A workfunction gateelectrode is located adjacent a sidewall of the gradient thresholdvoltage adjusting gate dielectric structure, and a top source region islocated on an upper portion of the at least one semiconductor fin.

In another embodiment, the structure includes a vertical transport nFETand a laterally adjacent vertical transport pFET. The vertical transportnFET includes at least one semiconductor fin present in an nFET deviceregion and extending upwards from a semiconductor substrate, wherein aninterfacial dielectric material is located on a sidewall surface of amiddle portion of the at least one semiconductor fin. A bottom nFETdrain region is located above the semiconductor substrate and a contactssidewall surface of a bottom portion of the at least one semiconductorfin. An nFET gradient threshold voltage adjusting gate dielectricstructure is located above the bottom nFET drain region and contacts theinterfacial dielectric material, wherein the nFET gradient thresholdvoltage adjusting gate dielectric structure comprises an nFET dopedinterface high-k gate dielectric material and a non-doped high-kdielectric material. A first workfunction gate electrode is locatedadjacent a sidewall of the nFET gradient threshold voltage adjustinggate dielectric structure, and a top nFET source region is located on anupper portion of the at least one semiconductor fin.

The vertical transport pFET includes at least one semiconductor finpresent in a pFET device region and extending upwards from thesemiconductor substrate, wherein an interfacial dielectric material islocated on a sidewall surface of a middle portion of the at least onesemiconductor fin. A bottom pFET drain region is located above thesemiconductor substrate and contacts a sidewall surface of a bottomportion of the at least one semiconductor fin present in the pFET deviceregion. A pFET gradient threshold voltage adjusting gate dielectricstructure is located above the bottom drain region and contacts theinterfacial dielectric material, wherein the pFET gradient thresholdvoltage adjusting gate dielectric structure comprises a pFET dopedinterface high-k gate dielectric material and a non-doped high-kdielectric material. A second workfunction gate electrode is locatedadjacent a sidewall of the pFET gradient threshold voltage adjustinggate dielectric structure, and a top pFET source region is located on anupper portion of the at least one semiconductor fin.

Another aspect of the present application relates to a method of forminga semiconductor structure. In one embodiment, the method includesforming at least one semiconductor fin extending upwards from asemiconductor substrate and located in a device region, wherein the atleast one semiconductor fin contains a hard mask cap thereon. A bottomdrain region is then formed above the semiconductor substrate andcontacting a sidewall surface of a bottom portion of the at least onesemiconductor fin. An interfacial dielectric material layer is formed ona sidewall surface of a middle portion of the at least one semiconductorfin, and thereafter a high-k gate dielectric material layer is formedlaterally adjacent the at least one semiconductor fin. A material stackportion containing an nFET or pFET dipole element containing layer isthen formed on a portion of the high-k gate dielectric material layer.An anneal is performed to drive-in the nFET or pFET dipole element intothe portion of the high-k gate dielectric material layer that isadjacent the material stack portion to provide a doped interface high-kgate dielectric material, wherein an upper portion of the high-kdielectric material layer remains non-doped. After the anneal, aworkfunction metal layer is formed on the physically exposed surface ofthe doped interface high-k gate dielectric material, and the non-dopedportion of the high-k gate dielectric material layer, and thereafter theworkfunction metal layer, the non-doped high-k gate dielectric material,and the interfacial dielectric material and the hard mask cap areremoved from an upper portion of the at least one semiconductor fin. Atop source region is then formed from physically exposed surfaces of theat least one semiconductor fin.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view of an exemplary semiconductor structureof the present application during an early stage of fabrication, andincluding a plurality of semiconductor fins extending upwards from asemiconductor substrate, wherein a first set of the plurality ofsemiconductor fins is located in an nFET device region, and a second setof the plurality of semiconductor fins is present in a pFET deviceregion, and wherein each semiconductor fin has a hard mask cap presentthereon.

FIG. 2 is a cross sectional view of the exemplary semiconductorstructure of FIG. 1 after forming a bottom nFET drain region contactinga sidewall surface of a bottom portion of each semiconductor fin presentin the nFET device region, and a bottom pFET drain region contacting asidewall surface of a bottom portion of each semiconductor fin presentin the pFET device region, and forming an isolation structure betweenthe different device regions.

FIG. 3 is a cross sectional view of the exemplary semiconductorstructure of FIG. 2 after forming a bottom spacer layer on the bottomnFET drain region and on the bottom pFET drain region.

FIG. 4 is a cross sectional view of the exemplary semiconductorstructure of FIG. 3 after forming an interfacial dielectric materiallayer on a physically exposed sidewall surface of each semiconductor finpresent in the nFET and pFET device regions, and forming a high-k gatedielectric material layer.

FIG. 5 is a cross sectional view of the exemplary semiconductorstructure of FIG. 4 after forming a first material stack containing annFET dipole element containing layer on the high-k gate dielectricmaterial layer in the nFET device region, and forming a second materialstack containing a pFET dipole element containing layer on the high-kdielectric material layer and in the pFET device region.

FIG. 6 is a cross sectional view of the exemplary semiconductorstructure of FIG. 5 after forming a first recessed sacrificial materiallayer on the first and second material stacks, and between eachsemiconductor fin present in the nFET and pFET device regions, andremoving the first and second material stacks not covered by the firstrecessed sacrificial material layer.

FIG. 7 is a cross sectional view of the exemplary semiconductorstructure of FIG. 6 after removing the first recessed sacrificialmaterial layer, and performing a drive-in anneal, wherein the drive-inanneal introduces the nFET dipole element of the remaining portion ofthe nFET dipole element containing layer into an adjacent portion of thehigh-k dielectric material layer to provide a doped high-k dielectricportion containing the nFET dipole element, and the pFET dipole elementof the remaining portion of the pFET dipole element containing layerinto an adjacent portion of the high-k dielectric material layer toprovide a doped high-k dielectric portion containing the pFET dipoleelement.

FIG. 8 is a cross sectional view of the exemplary semiconductorstructure of FIG. 7 after removing a remaining portion of the firstmaterial stack, and a remaining portion of the second material stack.

FIG. 9 is a cross sectional view of the exemplary semiconductorstructure of FIG. 8 after forming a workfunction metal layer.

FIG. 10 is a cross sectional view of the exemplary semiconductorstructure of FIG. 9 after forming a second recessed sacrificial materiallayer on the workfunction metal layer, and between each semiconductorfin present in the nFET device region and the pFET device region, andremoving physically exposed portions of the workfunction metal layer,the high-k dielectric material layer, and the interfacial dielectricmaterial layer.

FIG. 11 is a cross sectional view of the exemplary semiconductorstructure of FIG. 10 after removing the second recessed sacrificialmaterial layer, and forming a gate encapsulation layer, and amiddle-of-the-line (MOL) dielectric material.

FIG. 12 is a cross sectional view of the exemplary semiconductorstructure of FIG. 11 after exposing an upper portion of eachsemiconductor fin in the nFET device region and the pFET device region,and forming a top nFET source region on the exposed surfaces of thesemiconductor fins in the nFET device region, and a top pFET sourceregion on the exposed surfaces the semiconductor fins in the pFET deviceregion.

FIG. 13 is a cross sectional view of the exemplary semiconductorstructure of FIG. 12 after forming a top spacer layer and contactstructures.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

It will be understood that when an element as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “beneath” or “under” another element, it can bedirectly beneath or under the other element, or intervening elements maybe present. In contrast, when an element is referred to as being“directly beneath” or “directly under” another element, there are nointervening elements present.

Referring first to FIG. 1, there is illustrated an exemplarysemiconductor structure of the present application during an early stageof fabrication, and including a plurality of semiconductor fins 12extending upwards from a semiconductor substrate 10, wherein a first setof the plurality of semiconductor fins 12 is located in an nFET deviceregion 100, and a second set of the plurality of semiconductor fins 12is present in a pFET device region 102, and wherein each semiconductorfin 12 has a hard mask cap 14 present thereon.

Although the present application illustrates the formation of twosemiconductor fins 12 in each of the respective device regions (100,102), the present application is not limited to forming that number ofsemiconductor fins 12 into the respective device regions (100, 102).Instead, the present application can be employed when one or moresemiconductor fins 12 are formed into a respective device region (100,102). Also, and although the present application describes andillustrates the presence of an nFET device region 100 and a pFET deviceregion 102, the present application works equally well when one of thedevice regions is excluded.

As used herein, a “semiconductor fin” refers to a semiconductor materialportion that includes a pair of vertical sidewalls that are parallel toeach other. As used herein, a surface is “vertical” if there exists avertical plane from which the surface does not deviate by more thanthree times the root mean square roughness of the surface. In oneembodiment, each semiconductor fin 12 has a height from 20 nm to 200 nm,and a width from 5 nm to 30 nm. Other heights and/or widths that arelesser than, or greater than, the ranges mentioned herein can also beused in the present application. Each semiconductor fin 12 is spacedapart from its nearest neighboring semiconductor fin 12 by a pitch offrom 20 nm to 100 nm; the pitch is measured from one point of onesemiconductor fin to the exact point on a neighboring semiconductor fin.Also, each semiconductor fin 12 is oriented parallel to each other. Anopening or gap is present between each neighboring pair of semiconductorfins 12.

The semiconductor substrate 10 may be composed of a remaining portion ofa base semiconductor substrate (not shown). The semiconductor substrate10 may be composed of one or more semiconductor material havingsemiconductor properties. Examples of semiconductor materials that mayprovide the semiconductor substrate 10 include silicon (Si), germanium(Ge), silicon germanium alloys (SiGe), silicon carbide (SiC), silicongermanium carbide (SiGeC), III-V compound semiconductors or II-VIcompound semiconductors. III-V compound semiconductors are materialsthat include at least one element from Group III of the Periodic Tableof Elements and at least one element from Group V of the Periodic Tableof Elements. II-VI compound semiconductors are materials that include atleast one element from Group II of the Periodic Table of Elements and atleast one element from Group VI of the Periodic Table of Elements.

The semiconductor fins 12 may be composed of one of the semiconductormaterial mentioned above for the semiconductor substrate 10. In oneembodiment, the semiconductor fins 12 and the semiconductor substrate 10are composed entirely of a same semiconductor material. In one example,the semiconductor fins 12 and the semiconductor substrate 10 areentirely composed of silicon. In another embodiment, the semiconductorfins 12 are composed of a different semiconductor material than at leastthe uppermost portion of the semiconductor substrate 10. In one example,the semiconductor fins 12 are composed of silicon, while at least theuppermost portion of the semiconductor substrate 10 is composed asilicon germanium alloy.

Each hard mask cap 14 is composed of a dielectric hard mask materialsuch as, for example, silicon dioxide, silicon nitride and/or siliconoxynitride. In one example, silicon nitride is employed as thedielectric hard mask material of each hard mask cap 14. As is shown, thehard mask cap 14 has sidewall surfaces that are vertically aligned tosidewall surfaces of the underlying semiconductor fin 12.

The exemplary semiconductor structure can be formed by first providing ahard mask layer (not shown) onto a surface of a base semiconductorsubstrate (not shown). The base semiconductor substrate is typically abulk semiconductor substrate. By “bulk” it is meant that the basesemiconductor substrate is entirely composed of at least onesemiconductor material having semiconducting properties. The basesemiconductor substrate may include at least one of the semiconductormaterials mentioned above for semiconductor substrate 10, and the hardmask layer may include one of the dielectric hard mask materialsmentioned above for the hard mask caps 14.

The hard mask layer may be formed utilizing a deposition process suchas, for example, chemical vapor deposition (CVD) or plasma enhancedchemical vapor deposition (PECVD). In some embodiments, the hard masklayer may be formed by a thermal growth process such as, for example,thermal oxidation and/or thermal nitridation. In yet other embodiments,the hard mask layer may be formed utilizing a combination of, and in anyorder, a deposition process and a thermal growth process. The hard masklayer is a continuous layer (without any breaks or gaps) whose thicknessmay be from 20 nm to 100 nm. Other thicknesses that are lesser than, orgreater than the aforementioned thicknesses values may also be employedas the thickness of the hard mask layer.

The hard mask layer and an upper semiconductor material portion of thebase semiconductor substrate are then patterned to provide the exemplarysemiconductor structure shown in FIG. 1.

In one embodiment, the patterning of the hard mask layer and the uppersemiconductor material portions of the base semiconductor substrate mayinclude lithography and etching. The lithographic process includesforming a photoresist (not shown) atop a material or material stack tobe patterned, exposing the photoresist to a desired pattern ofradiation, and developing the exposed photoresist utilizing aconventional resist developer. The photoresist may be a positive-tonephotoresist, a negative-tone photoresist or a hybrid-tone photoresist.The etching process (i.e., pattern transfer etch) includes a dry etchingprocess (such as, for example, reactive ion etching, ion beam etching,plasma etching or laser ablation), and/or a wet chemical etchingprocess. In some embodiments, the patterned photoresist is removed fromthe structure immediately after the pattern has been transferred intothe hard mask layer. In other embodiments, the patterned photoresist isremoved from the structure after the pattern has been transferred intoboth the hard mask layer and the upper semiconductor material portion ofthe base semiconductor substrate. In either embodiment, the patternedphotoresist may be removed utilizing a conventional photoresiststripping process such as, for example, ashing.

In another embodiment, the patterning of the hard mask layer and theupper semiconductor material portion of the base semiconductor substratemay include a sidewall image transfer (SIT) process. The SIT processincludes forming a mandrel material layer (not shown) atop the materialor material layers that are to be patterned. The mandrel material layer(not shown) can include any material (semiconductor, dielectric orconductive) that can be selectively removed from the structure during asubsequently performed etching process. In one embodiment, the mandrelmaterial layer (not shown) may be composed of amorphous silicon orpolysilicon. In another embodiment, the mandrel material layer (notshown) may be composed of a metal such as, for example, Al, W, or Cu.The mandrel material layer (not shown) can be formed, for example, bychemical vapor deposition or plasma enhanced chemical vapor deposition.Following deposition of the mandrel material layer (not shown), themandrel material layer (not shown) can be patterned by lithography andetching to form a plurality of mandrel structures (also not shown) onthe topmost surface of the structure.

The SIT process continues by forming a spacer (not shown) on eachsidewall of each mandrel structure. The spacer can be formed bydeposition of a spacer material and then etching the deposited spacermaterial. The spacer material may comprise any material having an etchselectivity that differs from the mandrel material. Examples ofdeposition processes that can be used in providing the spacer materialinclude, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), or atomic layer deposition (ALD).Examples of etching that be used in providing the spacers include anyetching process such as, for example, reactive ion etching.

After formation of the spacers, the SIT process continues by removingeach mandrel structure. Each mandrel structure can be removed by anetching process that is selective for removing the mandrel material.Following the mandrel structure removal, the SIT process continues bytransferring the pattern provided by the spacers into the underlyingmaterial or material layers. The pattern transfer may be achieved byutilizing at least one etching process. Examples of etching processesthat can used to transfer the pattern may include dry etching (i.e.,reactive ion etching, plasma etching, and ion beam etching or laserablation) and/or a chemical wet etch process. In one example, the etchprocess used to transfer the pattern may include one or more reactiveion etching steps. Upon completion of the pattern transfer, the SITprocess concludes by removing the spacers from the structure. Eachspacer may be removed by etching or a planarization process.

In yet a further embodiment, the patterning of the hard mask layer andthe upper semiconductor material portion of the base semiconductorsubstrate may include a direct self-assembly (DSA) process in which acopolymer that is capable of direct self-assembly is used.

Referring now to FIG. 2, there is illustrated the exemplarysemiconductor structure of FIG. 1 after forming a bottom nFET drainregion contacting a sidewall surface of a bottom portion eachsemiconductor fin 12 present in the nFET device region 100, and a bottompFET drain region 20 contacting a sidewall surface of a bottom portionof each semiconductor fin 12 present in the pFET device region 102, andforming an isolation structure 16 between the different device regions(100/102).

The bottom nFET drain region 18 and the bottom pFET drain region 20 canbe formed in any order, and on a physically exposed surface of thesemiconductor substrate 10. In one embodiment, the bottom nFET drainregion 18 can be formed prior to the bottom pFET drain region 20. Insuch an embodiment, a block mask is formed in the pFET device region 102and then the bottom nFET drain region 18 is formed by an epitaxialdeposition or growth process. Following the epitaxial deposition orgrowth of the bottom nFET drain region 18, the block mask is removedfrom the pFET device region 102, another block mask is formed in thenFET device region 100 that now includes the bottom nFET drain region18, and thereafter the bottom pFET drain region 20 is formed by anotherepitaxial deposition or growth process. Following epitaxial depositionor growth of the bottom pFET drain region 20, the other block mask isremoved from the nFET device region 100. In embodiments in which thebottom pFET drain region 20 is formed prior to the bottom nFET drainregion 18, the order of the above mentioned processing steps isreversed.

The bottom nFET drain region 18 includes a semiconductor material (asdefined above) and an n-type dopant. The semiconductor material thatprovides the bottom nFET drain region 18 may be the same as, ordifferent from, the semiconductor material of semiconductor substrate10. The term “n-type” refers to the addition of impurities thatcontributes free electrons to an intrinsic semiconductor. In a siliconcontaining semiconductor material, examples of n-type dopants, i.e.,impurities, include, but are not limited to, antimony, arsenic andphosphorous. The concentration of n-type dopant within the semiconductormaterial that provides the bottom nFET drain region 18 can range from1×10¹⁸ atoms/cm³ to 1×10² atoms/cm³, although dopant concentrationsgreater than 1×10² atoms/cm³ or less than 1×10¹⁸ atoms/cm³ are alsoconceived. The bottom nFET drain region 18 has a height that is lessthan a height of each of the semiconductor fins 12 in the nFET deviceregion 100. The bottom nFET drain region 18 contacts a sidewall surfaceof a bottom portion of the semiconductor fins 12 that are present in thenFET device region 100.

The bottom pFET drain region 20 includes a semiconductor material (asdefined above) and a p-type dopant. The semiconductor material thatprovides the bottom pFET drain region 20 may be the same as, ordifferent from, the semiconductor material of semiconductor substrate10. Also, the semiconductor material that provides the bottom pFET drainregion 20 may be the same as, or different from, the semiconductormaterial that provides the n-doped semiconductor drain region 18. Theterm “p-type” refers to the addition of impurities to an intrinsicsemiconductor that creates deficiencies of valence electrons. In asilicon-containing semiconductor material, examples of p-type dopants,i.e., impurities, include, but are not limited to, boron, aluminum,gallium and indium. The concentration of p-type dopant within thesemiconductor material that provides the bottom pFET drain region 20 canrange from 1×10¹⁸ atoms/cm³ to 1×10²¹ atoms/cm³, although dopantconcentrations greater than 1×10²¹ atoms/cm³ or less than 1×10¹⁸atoms/cm³ are also conceived. The bottom pFET drain region 20 has aheight that is less than a height of each of the semiconductor fins 12in the pFET device region 102. The bottom pFET drain region 20 contactsa sidewall surface of a bottom portion of the semiconductor fins 12 thatare present in the pFET device region 102. The bottom pFET drain region20 may have a topmost surface that is coplanar with a topmost surface ofthe bottom nFET drain region 18.

As mentioned above, the bottom nFET drain region 18 and bottom pFETdrain region 20 can be formed utilizing an epitaxial growth (ordeposition) process. The terms “epitaxially growing and/or depositing”and “epitaxially grown and/or deposited” mean the growth of asemiconductor material on a deposition surface of a semiconductormaterial, in which the semiconductor material being grown has the samecrystalline characteristics as the semiconductor material of thedeposition surface. In an epitaxial growth process, the chemicalreactants provided by the source gases are controlled and the systemparameters are set so that the depositing atoms arrive at the depositionsurface of the semiconductor substrate with sufficient energy to movearound on the surface and orient themselves to the crystal arrangementof the atoms of the deposition surface. Therefore, an epitaxialsemiconductor material has the same crystalline characteristics as thedeposition surface on which it is formed. In the present application,the bottom nFET drain region 18 and bottom pFET drain region 20 have anepitaxial relationship with the physically exposed surface of thesemiconductor substrate 10 and the sidewall surfaces of eachsemiconductor fin 12.

Examples of various epitaxial growth process apparatuses that can beemployed in the present application include, e.g., rapid thermalchemical vapor deposition (RTCVD), low-energy plasma deposition (LEPD),ultra-high vacuum chemical vapor deposition (UHVCVD), atmosphericpressure chemical vapor deposition (APCVD) and molecular beam epitaxy(MBE). The epitaxial growth may be performed at a temperature of from300° C. to 800° C. The epitaxial growth can be performed utilizing anywell known precursor gas or gas mixture. Carrier gases like hydrogen,nitrogen, helium and argon can be used. A dopant (n-type or p-type, asdefined below) is typically added to the precursor gas or gas mixture.

In some embodiments, isolation structure 16 can be formed between thedifferent device regions (100/102). The isolation structure 16 can beformed by forming a trench opening in an area in which sidewalls of thebottom nFET drain region 18 and bottom pFET drain region 20 are incontact with each other, and then filling the trench opening with atrench dielectric material such as, for example, silicon dioxide. Arecess etch may follow the trench filling step. Although the presentapplication describes forming the isolation structure 16 after formingthe bottom nFET drain region 18 and bottom pFET drain region 20, theisolation structure 16 may be formed prior to forming the bottom nFETdrain region 18 and the bottom pFET drain region 20.

Referring now to FIG. 3, there is illustrated the exemplarysemiconductor structure of FIG. 2 after forming a bottom spacer layer 22on the bottom nFET drain region 18 and on the bottom pFET drain region20. In embodiments in which the isolation structure 16 is present, thebottom spacer layer 22 may also be formed on the isolation structure 16.

The bottom spacer layer 22 contacts a sidewall surface of the bottomportion of the semiconductor fins 12 present in each of the deviceregions (100/102). The bottom spacer layer 22 may be composed of anydielectric spacer material including for example, silicon dioxide,silicon nitride or silicon oxynitride; the bottom spacer layer 22 iscompositionally different from the hard mask caps 14. The bottom spacerlayer 22 may be formed utilizing a deposition process such as, forexample, chemical vapor deposition or plasma enhanced chemical vapordeposition. In some instances, an etch back process may follow thedeposition of the dielectric spacer material that provides the bottomspacer layer 22. The bottom spacer layer 22 may have a thickness from 4nm to 10 nm. Other thicknesses that are lesser than, or greater than,the aforementioned thickness range may also be employed in the presentapplication as the thickness of the bottom spacer layer 22 as long asthe height of the bottom spacer 22 is not greater than the height of thesemiconductor fins 12 and there is sufficient area on each thesemiconductor fins 12 to form other components of a vertical transportFET.

Referring now to FIG. 4, there is illustrated the exemplarysemiconductor structure of FIG. 3 after forming an interfacialdielectric material layer 24L on a physically exposed sidewall surfaceof each semiconductor fin 12 present in the nFET and pFET device regions(100, 102), and forming a high-k gate dielectric material layer 26L. Asis shown, the interfacial dielectric material layer 24L is formed on thesidewalls of each semiconductor fin 12; no interfacial dielectricmaterial layer 24L is present on the hard mask caps 14.

The interfacial dielectric material layer 24L is composed of an oxide ofthe semiconductor material of the semiconductor fins 12. In one example,the interfacial dielectric material layer 24L is composed of silicondioxide. The interfacial dielectric material layer 24L can be formedutilizing a thermal oxidation (i.e., growth) process. The interfacialdielectric material layer 24L may have a thickness from 0.5 nm to 2.0nm.

As is shown, the high-k gate dielectric material layer 26L is acontinuous layer that is formed laterally adjacent to a sidewall surfaceof each semiconductor fin 12 and each hard mask cap 14 present in thenFET and pFET device regions (100, 102), as well as on the topmostsurface of each hard mask cap 14 and a topmost surface of the bottomspacer layer 22. The term “high-k gate dielectric material” denotes agate dielectric material having a dielectric constant greater thansilicon dioxide. Exemplary high-k dielectrics include, but are notlimited to, HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃,HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(x), a silicatethereof, and an alloy thereof. Each value of x is independently from 0.5to 3 and each value of y is independently from 0 to 2. The high-k gatedielectric material layer 26L can be formed by any deposition processincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), physical vapor deposition (PVD),sputtering, or atomic layer deposition (ALD). In one embodiment of thepresent application, the high-k gate dielectric material layer 26L canhave a thickness in a range from 1 nm to 10 nm. Other thicknesses thatare lesser than, or greater than, the aforementioned thickness range canalso be employed for high-k gate dielectric material layer 26L. Thehigh-k gate dielectric material layer 26L is typically a conformallayer.

Referring now to FIG. 5, there is illustrated the exemplarysemiconductor structure of FIG. 4 after forming a first material stack28L containing an nFET dipole element containing layer on the high-kgate dielectric material layer 26L in the nFET device region 100, andforming a second material stack 30L containing a pFET dipole elementcontaining layer on the high-k dielectric material layer 26L and in thepFET device region 102. The first and second material stacks (28L, 30L)can be formed in any order utilizing block mask technology to block onedevice region, while processing the non-blocked device region to includethe appropriate material stack.

The first material stack 28L includes an nFET dipole element containinglayer that is located between top and bottom metal nitride barrierlayers; the individual layers of the first material stack 28L and thesecond material stack 30L are not shown in the drawings. The top andbottom metal nitride barrier layers of the first material stack 28L maybe composed of TiN or TaN. The top and bottom metal nitride barrierlayers of the first material stack 28L may be formed by a depositionprocess such as, for example, chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), physical vapor deposition(PVD), sputtering, or atomic layer deposition (ALD). The top and bottommetal nitride barrier layers of the first material stack 28L may have athickness from 0.5 nm to 3.0 nm.

The nFET dipole element containing layer of the first material stack 28Lis composed of an oxide of a Group IIA (i.e., Group 2) element of thePeriodic Table of Elements, or an oxide of a Group IIIB (i.e., Group 3)element of the Periodic Table of Elements. All Group IIA and Group IIIBelements are nFET like compared to the high-k gate dielectric materiallayer 26L. Thus, Group IIA and Group IIIB elements will provide anegative threshold voltage shift to an nFET device. Some examples ofnFET dipole element containing layers that can be employed in thepresent application include, but are not limited to, magnesium oxide(MgO), or lanthanum oxide (LaO).

The nFET dipole element containing layer of the first material stack 28Lcan be formed utilizing a deposition process such as, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering, oratomic layer deposition (ALD). The nFET dipole element containing layerof the first material stack 28L may have a thickness from 0.5 nm to 3.0nm.

The second material stack 30L includes a pFET dipole element containinglayer that is located between top and bottom metal nitride barrierlayers. The top and bottom metal nitride barrier layers of the secondmaterial stack 30L may be composed of TiN or TaN. The top and bottommetal nitride barrier layers of the second material stack 30L may beformed by a deposition process such as, for example, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),physical vapor deposition (PVD), sputtering, or atomic layer deposition(ALD). The top and bottom metal nitride barrier layers of the secondmaterial stack 30L may have a thickness from 0.5 nm to 3.0 nm.

The pFET dipole element containing layer of the second material stack30L is composed of aluminum oxide. The aluminum oxide is pFET likecompared to the high-k gate dielectric material layer 26L. Thus, thealuminum oxide will provide a positive threshold voltage shift to a pFETdevice.

The pFET dipole element containing layer of the second material stack30L can be formed utilizing a deposition process such as, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering, oratomic layer deposition (ALD). The pFET dipole element containing layerof the second material stack 30L may have a thickness from 0.5 nm to 3.0nm.

In some embodiments of the present application (and as is illustrated inFIG. 5), the first material stack 28L and the second material stack 30Lhave non-overlapping end portions that contact each. In otherembodiments of the present application (not illustrated), the firstmaterial stack 28L has an end portion that may overlap, or underlap, theend portion of the second material stack 30L.

Referring now to FIG. 6, there is illustrated the exemplarysemiconductor structure of FIG. 5 after forming a first recessedsacrificial material layer 32 on the first and second material stacks(28L, 30L), and between each semiconductor fin 12 present in the nFETand pFET device regions (100, 102), and removing the first and secondmaterial stacks (28L, 30L) not covered by the first recessed sacrificialmaterial layer 32. The remaining portion of the first material stack maybe referred to herein as a first material stack portion 28P, while theremaining portion of the second material stack may be referred to hereinas a second material stack portion 30P. At this point of the presentapplication, the first and second material stack portions (28P, 30P) arecovered by the first recessed sacrificial material layer 32. As is shownin FIG. 6, each of the first and second material stack portions (28P,30P) has a topmost surface that is coplanar with a topmost surface offirst recessed sacrificial material layer 32.

The first recessed sacrificial material layer 32 is composed of amaterial that has a different etch selectivity than the first and secondmaterial stacks (28L, 30L). In one embodiment, the first recessedsacrificial material layer 32 is composed of an organic planarizationlayer (OPL). The first recessed sacrificial material layer 32 can formedby deposition of a dielectric material, and thereafter performing arecess etch. The first recessed sacrificial material layer 32 has heightthat is less than the height of each semiconductor fin 12. In oneembodiment, the first recessed sacrificial material layer 32 has aheight from 10 nm to 30 nm.

The physically exposed portions of the first and second material stacks(28L, 30L) not covered by the first recessed sacrificial material layer32 are then removed utilizing an etch that is selective in removing thefirst material stack 28L and the second material stack 30L. In oneembodiment, a single etch may be used to simultaneously remove both thefirst and second material stacks (28L, 30L). In another embodiment, twodifferent etching processes, one which is selective in removing thefirst material stack 28L and the other that is selective in removing thesecond material stack 30L, may be used. In such an embodiment, the orderof removing the physically exposed portions of the first and secondmaterial stacks (28L, 30L) may vary. For example, the physically exposedportion of the first material stack 28L may be removed prior to theremoval of the physically exposed portion of the second material stack30L. In another example, the physically exposed portion of the secondmaterial stack 30L may be removed prior to the removal of the physicallyexposed portion of the first material stack 28L.

After removing the physically exposed portions of the first and secondmaterial stacks (28L, 30L) not covered by the first recessed sacrificialmaterial layer 32, an upper portion of the high-k gate dielectricmaterial layer 26L that is present along an upper portion of thesidewalls of each semiconductor fin 10 and each hard mask cap 14 is nowphysically exposed.

Referring now to FIG. 7, there is illustrated the exemplarysemiconductor structure of FIG. 6 after removing the first recessedsacrificial material layer 32, and performing a drive-in anneal. Theremoval of the first recessed sacrificial material layer 32 can beperformed utilizing a material removal process such as, for example, anetch, that is selective in removing the first recessed sacrificialmaterial layer 32.

After removing first recessed sacrificial material layer 32, a drive-inanneal is performed. In some embodiments, and prior to performing thedrive-in anneal, a material stack (not shown) composed of amorphoussilicon and a metal nitride diffusion barrier layer is formed on thephysically exposed first material stack portion 28P and/or thephysically exposed second material stack portion 30P. In such anembodiment, the material stack including the amorphous silicon layer andthe metal nitride diffusion barrier layer may be formed by deposition ofamorphous silicon and deposition of a metal nitride.

In accordance with the present application, the drive-in annealintroduces (via diffusion) the nFET dipole element of the remainingportion of the nFET dipole element containing layer of the firstmaterial stack portion 28P into an adjacent portion of the high-kdielectric material layer 26L to provide a doped high-k gate dielectricportion containing the nFET dipole element, and the pFET dipole elementof the remaining portion of the pFET dipole element containing layer ofthe second material stack portion 30P into an adjacent portion of thehigh-k dielectric material layer 26L to provide a doped high-kdielectric portion containing the pFET dipole element.

A portion of the high-k gate dielectric material layer 26L that ispresent along the sidewalls of an upper portion of the semiconductorfins 12 and the physically exposed surfaces of each hard mask cap 14remains non-doped. The non-doped high-k gate dielectric material portionis designated as element 26P. The non-doped high-k gate dielectricmaterial portion 26P does not include any Group IIA element, IIIBelement, or aluminum as defined above.

The doped high-k gate dielectric portion containing the nFET dipoleelement may be referred to herein as an nFET doped interface high-k gatedielectric material 34, while the doped high-k gate dielectric portioncontaining the pFET dipole element may be referred to herein as a pFETdoped interface high-k gate dielectric material 36.

The nFET doped interface high-k gate dielectric material 34 contains ahigh-k gate dielectric material, as mentioned above, and an element fromGroup IIA or Group IIIB of the Periodic Table of Elements, as alsomentioned above. The content of the element from Group IIA or Group IIIBof the Periodic Table of Elements that is present in the nFET dopedinterface high-k gate dielectric material 34 may range from 1E14atoms/cm² to 1E15 atoms/cm². The content of the Group IIA or IIIBelement in the remaining portion of the nFET dipole element containinglayer of the first material stack portion 28P may be reduced from itsoriginal content.

The pFET doped interface high-k gate dielectric material 36 containsaluminum. The content of aluminum that is present in the pFET dopedinterface high-k gate dielectric material 36 may range from 1E14atoms/cm² to 1E15 atoms/cm². The content of aluminum in the remainingportion of the pFET dipole element containing layer of the secondmaterial stack portion 30P may be reduced from its original content.

The drive-in anneal may be performed at a temperature of 900° C. orgreater. In one embodiment, the drive-in anneal may be performed at atemperature from 1050° C. to 1450° C. The drive-in anneal is performedin an inert ambient such as, for example, helium, argon, neon, and/ornitrogen. The duration of the drive-in anneal may vary. In one example,the duration of the drive-in anneal is from 1 ms to 1 s. After thedrive-in anneal, and if present, the material stack of the amorphoussilicon layer and the metal nitride diffusion barrier is removed fromthe structure utilizing a material removal process such as, for example,etching, that is selective in removing such a material stack.

Referring now to FIG. 8, there is illustrated the exemplarysemiconductor structure of FIG. 7 after removing the remaining portionof the first material stack (i.e., the first material stack portion28P), and the remaining portion of the second material stack (i.e., thesecond material stack portion 30P). The removal of the first materialstack portion 28P and the second material stack portion 30P may beperformed utilizing an etch that is selective in removing the firstmaterial stack portion 28P and the second material stack portion 30P. Inone embodiment, a single etch may be used to simultaneously remove boththe first and second material stack portions (28P, 30P). In anotherembodiment, two different etching processes, one which is selective inremoving the first material stack portion 28P and the other that isselective in removing the second material stack portion 30P, may beused. In such an embodiment, the order of removing the first and secondmaterial stack portions (28P, 30P) may vary. For example, the firstmaterial stack portion 28P may be removed prior to the removal of thesecond material stack portion 30P. In another example, the secondmaterial stack portion 30P may be removed prior to the removal of thefirst material stack portion 28P.

After removal of the first and second material stack portions (28P,30P), the nFET doped interface high-k gate dielectric material 34, andthe pFET doped interface high-k gate dielectric material 36 arephysically exposed.

Referring now to FIG. 9, there is illustrated the exemplarysemiconductor structure of FIG. 8 after forming a workfunction metallayer 38L. As the illustrated embodiment, the workfunction metal layer38L is a continuous layer that is present on the physically exposed nFETdoped interface high-k gate dielectric material 34, pFET doped interfacehigh-k gate dielectric material 36, and non-doped high-k gate dielectricmaterial portion 26P. In such an embodiment, the workfunction metallayer 38L is composed of a single workfunctional metal that is presentin the nFET device region 100 and the pFET device region 102. The singleworkfunction metal that can provide the workfunction metal layer 38L mayinclude a p-type work functional metal or an n-type workfunction metal.P-type work function metals include compositions such as ruthenium,palladium, platinum, cobalt, nickel, and conductive metal oxides, metalnitrides, such as titanium nitride, tantalum nitride, or any combinationthereof. N-type workfunction metal materials include compositions suchas hafnium, zirconium, titanium, tantalum, aluminum, metal carbides(e.g., hafnium carbide, zirconium carbide, titanium carbide, andaluminum carbide), aluminides, or any combination thereof. In oneexample, the workfunction metal layer 38L is composed of a p-typeworkfunction TiN layer.

In some embodiments (not shown), an n-type workfunction metal layer isformed in the nFET device region, while a p-type workfunction metallayer is formed in the pFET device region. In such an embodiment, blockmask technology may be used to provide the ‘dual’ workfunction metallayers to the exemplary structure shown in FIG. 9.

The workfunction metal layer 38L may be formed utilizing a depositionprocess such as, for example, chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD) or atomic layer deposition(ALD). In some embodiments, an anneal may be performed after thedeposition of the workfunction metal layer 38L. When employed, theanneal may be a furnace anneal or a laser anneal. The anneal may beperformed at a temperature from 800° C. to 1100° C. and in an inertambient such as, for example, helium, argon and/or neon.

In one embodiment of the present application, the workfunction metallayer 38L can have a thickness in a range from 5 nm to 20 nm. Otherthicknesses that are lesser than, or greater than, the aforementionedthickness range can also be employed for the gate dielectric materialthat provides the workfunction metal layer 38L.

Referring now to FIG. 10, there is illustrated the exemplarysemiconductor structure of FIG. 9 after forming a second recessedsacrificial material layer 40 on the workfunction metal layer 38L, andbetween each semiconductor fin 12 present in the nFET device region 100and the pFET device region 102, and removing physically exposed portionsof the workfunction metal layer 38L, the high-k dielectric materiallayer (i.e., the non-doped high-k gate dielectric material portion 26P),and the interfacial dielectric material layer 24L.

The second recessed sacrificial material layer 40 may include one of thematerials as mentioned above for the first recessed sacrificial materiallayer 32. The second recessed sacrificial material layer 40 may beformed by deposition and etching as were mentioned above for forming thefirst recessed sacrificial material layer. The second recessedsacrificial material layer 40 has a height that is greater than theheight of the nFET doped interface high-k gate dielectric material 34and the pFET doped interface high-k gate dielectric material 36, butless than the height of each semiconductor fin 12.

The removal of the physically exposed portions of the workfunction metallayer 38L, the non-doped high-k gate dielectric material portion 26P,and the interfacial dielectric material layer 24L may be performedutilizing one or more etching process. A portion of the workfunctionmetal layer 38L, a portion of the non-doped high-k gate dielectricmaterial portion 26P, and a portion of the interfacial dielectricmaterial layer 24L remain. The remaining portion of the workfunctionmetal layer 28L is referred to herein as a workfunction gate electrode38P, the remaining portion of the non-doped high-k gate dielectricmaterial portion 26P is referred to herein as a non-doped high-k gatedielectric material 26, and the remaining portion of the interfacialdielectric material layer 24L is referred to herein as an interfacialdielectric material 24.

Collectively, the nFET doped interface high-k gate dielectric material34 and the non-doped high-k gate dielectric material 26 that are presentin the nFET device region 100 provide a gradient threshold voltageadjusting nFET gate dielectric structure, and collectively the pFETdoped interface high-k gate dielectric material 36 and the non-dopedhigh-k gate dielectric material 26 that are present in the pFET deviceregion 102 provide a gradient threshold voltage adjusting pFET gatedielectric structure. These gate dielectric structures are locatedlaterally adjacent a sidewall surface of a middle portion of eachsemiconductor fin 12 in their respective device regions (100, 102).

As is shown, the workfunction gate electrode 38P in the nFET deviceregion 100 is located laterally adjacent to, and in contact with, thegradient threshold voltage adjusting nFET gate dielectric structure (34,26), while the workfunction gate electrode 38P in the pFET device region102 is located laterally adjacent to, and in contact with, the gradientthreshold voltage adjusting pFET gate dielectric structure (36, 26). Asis further shown, the workfunction gate electrode 38P in the nFET deviceregion 100 has a topmost surface that is coplanar with a topmost surfaceof the non-doped high-k gate dielectric material 26 of the gradientthreshold voltage adjusting nFET gate dielectric structure (34, 26),while the workfunction gate electrode 38P in the pFET device region 102has a topmost surface that is coplanar with a topmost surface of thenon-doped high-k gate dielectric material 26 of the gradient thresholdvoltage adjusting pFET gate dielectric structure (36, 26).

As shown in FIG. 10, the sidewall surface of an upper portion of eachsemiconductor fins 12 are physically exposed after the removal of thephysically exposed portions of the workfunction metal layer 38L and thenon-doped high-k gate dielectric material portion 26P.

Referring now to FIG. 11, there is illustrated the exemplarysemiconductor structure of FIG. 10 after removing the second recessedsacrificial material layer 40, and forming a gate encapsulation layer42L, and a middle-of-the-line (MOL) dielectric material 44L. The secondrecessed sacrificial material layer 40 may be removed utilizing amaterial removal process as defined above for removing the first secondrecessed sacrificial material layer 32.

The gate encapsulation layer 42L includes a hard mask material that maybe the same as, or different from, the hard mask material that providesthe hard mask caps 14. In one example, the gate encapsulation layer 42Lmay have a thickness from 10 nm to 50 nm; although other thicknesses arepossible and are not excluded from being used.

The MOL dielectric material 44 is then formed on the gate encapsulationlayer 42L and laterally surrounds each of the semiconductor fins 12. Atthis point of the present application, the MOL dielectric material 44has a topmost surface that is coplanar with a topmost surface of thegate encapsulation layer 42L. The MOL dielectric material 44 may becomposed of, for example, silicon dioxide, undoped silicate glass (USG),fluorosilicate glass (FSG), borophosphosilicate glass (BPSG), a spin-onlow-k dielectric layer, a chemical vapor deposition (CVD) low-kdielectric layer or any combination thereof. The term “low-k” as usedthroughout the present application denotes a dielectric material thathas a dielectric constant of less than silicon dioxide. In anotherembodiment, a self-planarizing material such as a spin-on glass (SOG) ora spin-on low-k dielectric material such as SiLK™ can be used as the MOLdielectric material 44. The use of a self-planarizing dielectricmaterial as the MOL dielectric material 44 may avoid the need to performa subsequent planarizing step.

In one embodiment, the MOL dielectric material 44 can be formedutilizing a deposition process including, for example, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),evaporation or spin-on coating. In some embodiments, a planarizationprocess and/or an etch back process follows the deposition of the MOLdielectric material 44.

Referring now to FIG. 12, there is illustrated the exemplarysemiconductor structure of FIG. 11 after exposing an upper portion ofeach semiconductor fin 12 in the nFET device region 100 and the pFETdevice region 100, and forming a top nFET source region 46 on theexposed surfaces of the semiconductor fins 12 in the nFET device region100, and a top pFET source region 48 on the exposed surfaces thesemiconductor fins 12 in the pFET device region 102.

The exposing the upper portion of each semiconductor fin 12 in the nFETdevice region 100 and the pFET device region 102 includes firstrecessing an upper portion of the MOL dielectric material layer 44utilizing a recess etching process. The remaining recessed MOLdielectric material layer 44 may be referred to herein as a MOLdielectric material structure 44. The physically exposed portion of thegate encapsulation layer 42 is then removed utilizing a selective etchto provide a gate encapsulation liner 42L. The gate encapsulation liner42L has a topmost surface that is coplanar with a topmost surface of theMOL dielectric material structure 44.

Each hard mask cap 14 is then removed utilizing a material removalprocess such as, for example, etching or planarization. In someembodiments, and when the gate encapsulation layer 42L and the hard maskcaps 14 are composed of a same hard mask material, a portion of the hardmask caps 14 may be removed during the etching of the gate encapsulationlayer 42L. At this point of the present application, an upper portion(sidewalls and a topmost surface) of each semiconductor fin 12F isphysically exposed.

The top nFET source region 46 and the top pFET source region 48 whichcan be formed utilizing an epitaxial growth (or deposition) process, asdefined above, can be formed in any order. For example, and in oneembodiment, the top nFET source region 46 can be formed prior to the toppFET source region 48. In such an embodiment, a block mask is formed inthe pFET device region 102 and then the top nFET source region 46 isformed by epitaxial growth. Following the epitaxial growth of the topnFET source region 46, the block mask is removed from the pFET deviceregion 102, another block mask is formed in the nFET device region 100that now includes the top nFET source region 46, and thereafter the toppFET source region 48 is formed by epitaxial growth. Following epitaxialgrowth of the -doped semiconductor material source region 48, theanother block mask is removed from the nFET device region 100. Inembodiments, in which the top pFET source region 48 is formed prior tothe top nFET source region 46, the order of the above mentionedprocessing steps is reversed.

The top nFET source region 46 includes a semiconductor material (asdefined above) and an n-type dopant (as also defined above). Thesemiconductor material that provides the top nFET source region 46 maybe the same or different from the semiconductor material ofsemiconductor substrate 10. The concentration of n-type dopant withinthe semiconductor material that provides the top nFET source region 46can range from 1×10¹⁸ atoms/cm³ to 1×10²¹ atoms/cm³, although dopantconcentrations greater than 1×10²¹ atoms/cm³ or less than 1×10¹⁸atoms/cm³ are also conceived. The top nFET source region 46 may be grownon exposed sidewalls and a topmost surface of each semiconductor fin 12in the nFET device region 100. The top nFET source region 46 may have afaceted surface. In one example, the top nFET source region 46 may bediamond shaped.

The top pFET source region 48 includes a semiconductor material (asdefined above) and a p-type dopant (as also defined above). Thesemiconductor material that provides the top pFET source region 48 maybe the same or different from the semiconductor material ofsemiconductor substrate 10. Also, the semiconductor material thatprovides the top pFET source region 48 may be the same as, or differentfrom, the semiconductor material that provides the top nFET sourceregion 46. The concentration of p-type dopant within the semiconductormaterial that provides the top pFET source region 48 can range from1×10¹⁸ atoms/cm³ to 1×10²¹ atoms/cm³, although dopant concentrationsgreater than 1×10²¹ atoms/cm³ or less than 1×10¹⁸ atoms/cm³ are alsoconceived. The top pFET source region 48 may be grown on exposedsidewalls and a topmost surface of each semiconductor fin 12 in the pFETdevice region 102. The top pFET source region 48 may have a facetedsurface. In one example, the top pFET source region 48 may be diamondshaped.

FIG. 12 illustrated a structure that includes a vertical transport nFETand a laterally adjacent vertical transport pFET. The vertical transportnFET includes at least one semiconductor fin 12 present in an nFETdevice region 100 and extending upwards from a semiconductor substrate10, wherein an interfacial dielectric material layer 24 is located on asidewall surface of a middle portion of the at least one semiconductorfin 12. A bottom nFET drain region 18 is located above the semiconductorsubstrate 10 and contacts a sidewall surface of a bottom portion of theat least one semiconductor fin 12. An nFET gradient threshold voltageadjusting gate dielectric structure (34, 26) is located above the bottomnFET drain region 18 and contacts the interfacial dielectric material24, wherein the nFET gradient threshold voltage adjusting gatedielectric structure comprises an nFET doped interface high-k gatedielectric material 34 and a non-doped high-k dielectric material 26. Afirst workfunction gate electrode 38P is located adjacent a sidewall ofthe nFET gradient threshold voltage adjusting gate dielectric structure(34, 26) and a top nFET source region 46 is located on an upper portionof the at least one semiconductor fin 12.

The vertical transport pFET includes at least one semiconductor fin 12present in a pFET device region 102 and extending upwards from thesemiconductor substrate 10, wherein an interfacial dielectric materiallayer 26 is located on a sidewall surface of a middle portion of the atleast one semiconductor fin 12. A bottom pFET drain region 20 is locatedabove the semiconductor substrate 10 and contacts a sidewall surface ofa bottom portion of the at least one semiconductor fin 12 present in thepFET device region 102. A pFET gradient threshold voltage adjusting gatedielectric structure (36, 26) is located above the bottom pFET drainregion 22 and contacts the interfacial dielectric material layer 26,wherein the pFET gradient threshold voltage adjusting gate dielectricstructure comprises a pFET doped interface high-k gate dielectricmaterial 36 and a non-doped high-k dielectric material 26. A secondworkfunction gate electrode 38P is located adjacent a sidewall of thepFET gradient threshold voltage adjusting gate dielectric structure (36,26), and a top pFET source region 48 is located on an upper portion ofthe at least one semiconductor fin 12.

As is illustrated in FIG. 12, the non-doped high-k dielectric material26 of the gradient threshold voltage adjusting gate dielectric structureis positioned in close proximity to the top source region (46, 48),while the doped interface high-k gate dielectric (34, 36) is positionedin close proximity to the bottom drain region. The non-doped high-kdielectric material 26 has a higher threshold voltage than the dopedinterface high-k gate dielectric (34, 36). Thus, the gradient thresholdvoltage adjusting gate dielectric structure provides an asymmetricthreshold voltage profile to the channel region of the FET. Notably, asteep potential distribution can be provided near the source regions,which enhances the vertical channel electric field and thus increasesthe carrier mobility.

In some embodiments, the percentage of high threshold voltage (near thesource side) in the total channel length is from 20% to 50%. In someembodiments, the source side has a 100 mV to 300 mV higher thresholdvoltage than the drain side.

Referring now to FIG. 13, there is illustrated the exemplarysemiconductor structure of FIG. 12 after forming a top spacer layer 50and contact structures 54. The top spacer layer 50 is formed on thephysically exposed topmost surface of the MOL dielectric materialstructure 44 and on the physically exposed topmost surface of the gateencapsulation liner 42L.

The top spacer layer 50 may be composed of any dielectric spacermaterial including for example, silicon dioxide, silicon nitride orsilicon oxynitride. The top spacer layer 50 may be composed of a same,or different, dielectric spacer material than the bottom spacer layer22. The top spacer layer 50 may be formed utilizing a deposition processsuch as, for example, chemical vapor deposition or plasma enhancedchemical vapor deposition. In some instances, an etch may follow thedeposition of the dielectric spacer material that provides the topspacer layer 50. The top spacer layer 50 may have a thickness from 4 nmto 10 nm. Other thicknesses that are lesser than, or greater than, theaforementioned thickness range may also be employed in the presentapplication as the thickness of the top spacer layer 50.

After top spacer layer 50 formation, an interlayer dielectric (ILD)material 52 is formed. The ILD material 52 may include one of thedielectric materials mentioned above for the MOL dielectric materiallayer 44L. The ILD material 52 may include a same, or differentdielectric material, than the MOL dielectric material layer 44L. The ILDmaterial 52 may be formed by one of the deposition processes mentionedabove in forming the MOL dielectric material layer 44L. A planarizationprocess may follow the deposition of the dielectric material thatprovides the ILD material 50.

Contact openings (not specifically shown) are then formed into the ILDmaterial 50 to physically exposed surfaces of the top nFET source region44 and the top pFET source region 46. A contact metal such as, forexample, copper, aluminum, tungsten, cobalt, or alloys thereof is theformed into each contact opening utilizing a deposition process. Aplanarization process may follow the deposition process. The contactmetal or metal alloy within each contact opening is referred to hereinas a contact structure 54. As shown in FIG. 13, the contact structures54 have a topmost surface that is coplanar with a topmost surface of theILD material 50.

While the present application has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present application. It is therefore intended that the presentapplication not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A method of forming a semiconductor structure,the method comprising: forming at least one semiconductor fin extendingupwards from a semiconductor substrate, wherein the at least onesemiconductor fin contains a hard mask cap thereon; forming a bottomdrain region above the semiconductor substrate and contacting a sidewallsurface of a bottom portion of the at least one semiconductor fin;forming an interfacial dielectric material layer on a sidewall surfaceof a middle portion of the at least one semiconductor fin; forming ahigh-k gate dielectric material layer laterally adjacent the at leastone semiconductor fin; forming a material stack portion containing annFET dipole element containing layer on a portion of the high-k gatedielectric material layer; performing an anneal to drive-in the nFETdipole element into the portion of the high-k gate dielectric materiallayer that is adjacent the material stack portion to provide an nFETdoped interface high-k gate dielectric material, wherein an upperportion of the high-k dielectric material layer remains non-doped;removing the material stack portion; forming a workfunction metal layeron a physically exposed surface of the nFET doped interface high-k gatedielectric material, and the non-doped portion of the high-k gatedielectric material layer; removing the workfunction metal layer, thenon-doped portion of the high-k gate dielectric material layer, theinterfacial dielectric material layer, and the hard mask cap from anupper portion of the at least one semiconductor fin, while maintainingthe workfunction metal layer, the nFET doped interface high-k gatedielectric material, the non-doped portion of the high-k gate dielectricmaterial layer and the interfacial dielectric material layer adjacentthe middle portion of the at least one semiconductor fin; and forming atop source structure from physically exposed surfaces of the at leastone semiconductor fin.
 2. The method of claim 1, wherein the nFET dipoleelement containing layer comprises an nFET dipole element that providesa negative threshold voltage shift to an nFET.
 3. The method of claim 2,wherein the nFET dipole element is selected from Group IIA of thePeriodic Table of Elements.
 4. The method of claim 3, wherein the nFETdoped interface high-k dielectric material contains the Group IIAelement.
 5. The method of claim 2, wherein the nFET dipole element isselected from Group IIIB of the Periodic Table of Elements.
 6. Themethod of claim 5, wherein the nFET doped interface high-k dielectricmaterial contains the Group IIIBA element.
 7. The method of claim 1,wherein the forming of the bottom drain region comprises epitaxiallygrowing a semiconductor material that contains an n-type dopant, whereinthe bottom drain region has a height that is less than a height of theat least one semiconductor fin.
 8. The method of claim 1, furthercomprising forming a bottom spacer layer on the bottom drain region,wherein the bottom spacer layer has a height that is less than a heightof the at least one semiconductor fin and contacts the sidewall surfaceof the at least one semiconductor fin.
 9. The method of claim 1, whereinthe forming of the interfacial dielectric material layer comprises athermal oxidation process.
 10. The method of claim 1, wherein the nFETdoped interface high-k gate dielectric material and the non-doped high-kgate dielectric material that are maintained adjacent the middle portionof the at least one semiconductor fin collectively provide a gradientthreshold adjusting nFET gate dielectric structure.
 11. The method ofclaim 1, wherein the forming the top source structure comprisesepitaxially growing a semiconductor material that contains an n-typedopant.
 12. A method of forming a semiconductor structure, the methodcomprising: forming at least one semiconductor fin extending upwardsfrom a semiconductor substrate, wherein the at least one semiconductorfin contains a hard mask cap thereon; forming a bottom drain regionabove the semiconductor substrate and contacting a sidewall surface of abottom portion of the at least one semiconductor fin; forming aninterfacial dielectric material layer on a sidewall surface of a middleportion of the at least one semiconductor fin; forming a high-k gatedielectric material layer laterally adjacent the at least onesemiconductor fin; forming a material stack portion containing a pFETdipole element containing layer on a portion of the high-k gatedielectric material layer; performing an anneal to drive-in the pFETdipole element into the portion of the high-k gate dielectric materiallayer that is adjacent the material stack portion to provide a pFETdoped interface high-k gate dielectric material, wherein an upperportion of the high-k dielectric material layer remains non-doped;removing the material stack portion; forming a workfunction metal layeron the physically exposed surface of the pFET doped interface high-kgate dielectric material, and the non-doped portion of the high-k gatedielectric material layer; removing the workfunction metal layer, thenon-doped portion of the high-k gate dielectric material layer, theinterfacial dielectric material layer, and the hard mask cap from anupper portion of the at least one semiconductor fin, while maintainingthe workfunction metal layer, the pFET doped interface high-k gatedielectric material, the non-doped portion of the high-k gate dielectricmaterial layer and the interfacial dielectric material layer adjacentthe middle portion of the at least one semiconductor fin; and forming atop source structure from physically exposed surfaces of the at leastone semiconductor fin.
 13. The method of claim 12, wherein the pFETdipole element containing layer comprises a pFET dipole elementcontaining material that provides a positive threshold voltage shift toa pFET.
 14. The method of claim 13, wherein the pFET dipole elementcontaining material is aluminum oxide.
 15. The method of claim 14,wherein the pFET doped interface high-k dielectric material layercontaining aluminum.
 16. The method of claim 12, wherein the forming ofthe bottom drain region comprises epitaxially growing a semiconductormaterial that contains a p-type dopant, wherein the bottom drain regionhas a height that is less than a height of the at least onesemiconductor fin.
 17. The method of claim 12, further comprisingforming a bottom spacer layer on the bottom drain region, wherein thebottom spacer layer has a height that is less than a height of the atleast one semiconductor fin and contacts the sidewall surface of the atleast one semiconductor fin.
 18. The method of claim 12, wherein theforming of the interfacial dielectric material layer comprises a thermaloxidation process.
 19. The method of claim 12, wherein the pFET dopedinterface high-k gate dielectric material and the non-doped high-k gatedielectric material that are maintained adjacent the middle portion ofthe at least one semiconductor fin collectively provide a gradientthreshold adjusting pFET gate dielectric structure.
 20. The method ofclaim 12, wherein the forming the top source structure comprisesepitaxially growing a semiconductor material that contains p-typedopant.